Affiliation:
1. Ion Beam Engineering Experimental Laboratory, Kyoto University, 606 Kyoto, Japan
Abstract
The molecular-dynamics simulation is used for simulation of sputtering of gold and silicon surfaces by accelerated [Formula: see text] cluster ions with n~55–200 and energies of 10–100 eV per cluster atom. The sputtering yield Y can be described by a power dependency Y ∝E2.35 on the total cluster energy. The result of the calculation agrees with the experimental data point at the energy of 29 keV and cluster size of 300 Ar atoms. The simulation shows that the sputtered flux has a significant lateral-momentum component and the sputtered surface materials contain not only atoms but also small clusters.
Publisher
World Scientific Pub Co Pte Lt
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Cited by
18 articles.
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1. Enhanced sputtering yield of nanostructured samples under Ar+ cluster bombardment;Vacuum;2020-02
2. Crystal Structure and Accelerated Ion-Irradiation Effect of Water Clusters;e-Journal of Surface Science and Nanotechnology;2016
3. Nanocluster Ions and Beam Techniques for Material Modification;Transactions of the Materials Research Society of Japan;2016
4. Interactions of fragment ions of tetradecane with solid surfaces;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-12
5. Irradiation effect of gas-hydrate cluster ions on solid surfaces;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-05