Affiliation:
1. Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China
Abstract
Copper indium diselenide ( CuInSe 2) thin films were grown on indium–tin oxide (ITO)/soda-lime glass using a one-step cathodic electrodeposition process at potentials lower than -0.6 V vs SCE, and in the presence of a large excess of In 3+. The source solution contained CuCl 2, InCl 3, and H 2 SeO 3 complexed by citric acid. The concentration of InCl 3 in the electrochemical bath affected the structure, composition, stoichiometric ratio, and morphological properties of electrodeposited films. CuInSe 2 films with a chalcopyrite structure and quite good stoichiometry were directly electrodeposited from a solution of 20 mM InCl 3, 5 mM CuCl 2, and 8 mM H 2 SeO 3. Annealing of these CuInSe 2 films in the temperature range from 300°C to 500°C improves their crystallinity and increases their grain size. Good chalcopyrite CuInSe 2 films with a (112) preferential orientation suitable for the production of efficient solar cells are obtained after annealing at 500°C. The formation mechanism of the ternary CuInSe 2 compound during the electrodeposition process was discussed.
Publisher
World Scientific Pub Co Pte Lt
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference17 articles.
1. F. Kadırgan, Handbook of Advanced Electronic and Photonic Materials and Devices 10, ed. H. S. Nalwa (Academic Press, San Diego, 2001) pp. 301–309.
2. Formation of copper indium diselenide by electrodeposition
3. Electrodeposition of CuInSe2 films from a sulphate bath
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