NEW PHYSICAL PRINCIPLES OF CONTACT THERMOELECTRIC COOLING-Reference-Cited by-同舟云学术

NEW PHYSICAL PRINCIPLES OF CONTACT THERMOELECTRIC COOLING

Published:2002-10 Issue:05n06 Volume:09 Page:1703-1708
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

GUREVICH YU. G.¹,LOGVINOV G. N.²,TITOV O. YU.³,GIRALDO J.⁴

Affiliation:

1. Departamento de Física, CINVESTAV–IPN, Apdo. Postal 14-740, 07000 México, DF, Mexico

2. SEPI ESIME Culhuacan, Instituto Politecnico Nacional, Av. Santa Ana, 1000, Col. San Francisco, CD 04430, DF, Mexico

3. CICATA–IPN, Av. José Siurob 10, Col. Alameda, 76040 Querétaro, Qro., Mexico

4. Grupo de Física de la Materia Condensada, Universidad Nacional de Colombia, AA 60739, Bogotá, Colombia

Abstract

We suggest a new approach to theory of contact thermoelectric cooling (Peltier effect). The metal–metal, metal–n-type semiconductor, metal–p-type semiconductor, p–n junction contacts are analyzed. Both degenerate and nondegenerate electron and hole gases are considered. The role of recombination in the contact cooling effect is discussed for the first time.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X02004256

Reference5 articles.

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