PREPARATION AND PHOTOVOLTAIC PROPERTIES OF Ag2O/Si ISOTYPE HETEROJUNCTION-Reference-Cited by-同舟云学术

PREPARATION AND PHOTOVOLTAIC PROPERTIES OF Ag2O/Si ISOTYPE HETEROJUNCTION

Published:2005-04 Issue:02 Volume:12 Page:299-303
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

ISMAIL RAID A.¹,YAHYA KHALID Z.²,ABDULRAZAQ OMAR A.³

Affiliation:

1. Applied Physics Center, Ministry of Science and Technology, Baghdad, Iraq

2. School of Applied Sciences, University of Technology, Baghdad, Iraq

3. NASSR State Company, Ministry of Industry and Minerals, Baghdad, Iraq

Abstract

Highly (101)-oriented p-Ag 2 O thin film with high electrical resistivity was grown by rapid thermal oxidation (RTO) on clean monocrystalline p-type Si without any post-deposition annealing. From optical transmittance and absorptance data, the direct optical band gap was found to be 1.46 eV. The electrical and photovoltaic properties of Ag 2 O/Si isotype heterojunction were examined in the absence of any buffer layer. Ideality factor of heterojunction was found to be 3.9. Photoresponce result revealed that there are two peaks located at 750 nm and 900 nm.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X05007074

Reference7 articles.

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