An ISS Study of Ga-Dimer Arrangement in the GaP(001)-(4 × 2) Surface-Reference-Cited by-同舟云学术

An ISS Study of Ga-Dimer Arrangement in the GaP(001)-(4 × 2) Surface

Published:1998-02 Issue:01 Volume:05 Page:223-227
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

Oishi N.¹,Shoji F.²,Konishi A.³,Naitoh M.³,Nishigaki S.³

Affiliation:

1. Kumamoto National College of Technology, Kumamoto 861-11, Japan

2. Kyushu Kyoritsu University, Yahatanishi, Kitakyushu 807, Japan

3. Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan

Abstract

A GaP(001) Ga-rich surface produced by ion sputtering followed by annealing exhibited a 4 × 2 LEED pattern with half streaks in the [110] direction. We have studied the structure of this surface by low-energy ion-scattering spectroscopy (ISS) using alkali ions ( Na +) .We have found a unit cell of the 4 × 2 structure consisting of two Ga dimers plus two dimer vacancies from the measured incidence-angle dependence of the scattered-ion intensity in the [Formula: see text] surface azimuth and an atomic separation in the Ga dimer being about 0.27 nm from that in the [110] surface azimuth. Evidence is presented showing the unit structures being arranged irregularly in the [Formula: see text] direction around the twofold positions.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X98000414

Reference13 articles.

1. Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES

2. Structure of GaAs(001)(2×4)−c(2×8)Determined by Scanning Tunneling Microscopy

3. Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy

4. Scanning tunneling microscopy of the filled and empty arsenic states on the GaAs(001)-(2 × 4) surface

5. Structures of As-Rich GaAs(001)-(2 × 4) Reconstructions

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Distinct and dramatic water dissociation on GaP(111) tracked by near-ambient pressure X-ray photoelectron spectroscopy;Physical Chemistry Chemical Physics;2015

2. III-V compound semiconductor (001) surfaces;Applied Physics A: Materials Science & Processing;2002-07-01

3. Structure and Energetics of P-rich GaP(001) Surfaces;physica status solidi (a);2001-03

4. Clarification of theGaP(001)(2×4)Ga-rich reconstruction by scanning tunneling microscopy andab initiotheory;Physical Review B;2000-10-15

5. (2×4)GaP(001) surface: Atomic structure and optical anisotropy;Physical Review B;1999-07-15