METAL-DOPED ZnO THIN FILMS: SYNTHESIS, ETCHING CHARACTERISTIC, AND APPLICATION TEST FOR ORGANIC LIGHT EMITTING DIODE (OLED) DEVICES

Abstract

Metal-doped ZnO films with various metal contents ( Al , Ag and Li of 0–10 wt.%) were prepared by RF magnetron sputtering system with specially designed ZnO targets. The structural, optical and electrical properties of MZO films depended on the type and content of doping in target. Electrical resistivity of LZO thin films increased with increasing Li doping amounts between 0 and 4 wt.%, suggesting that an epitaxial LZO film has high resistivity. We observed morphology in pure ZnO films by using different etchant. In addition, etching rate were contrasted with the etchant concentration and pH. The etching rate is proportional exponentially to pH value. These data will be the technical basis for TCO application. Also, the dry etching rate decreased with increasing the Cl 2 concentration in CH 4/ H 2/ Ar + additive Cl 2 gas mixture but metal dopants were etched effectively.