COMBINED USE OF QUANTITATIVE LEED AND STM ON Cu(100)-c(2×2)N SURFACES

Abstract

Quantitative low-energy electron diffraction (LEED) has been used in conjunction with Scanning Tunneling Microscopy (STM) to demonstrate that these two techniques are complementary and that quantitative LEED can be used in surface analysis without the need for computationally intensive theoretical calculations. We present LEED intensity-voltage (I-V) curves from Cu (100)-c(2×2) N surfaces and make qualitative comparisons with quantitative LEED data that exists in the literature. The implications of these comparisons are discussed with respect to other studies of this system.