STRUCTURAL AND ELECTRONIC PROPERTIES OF c-BN(110) SURFACE AND SURFACE POINT DEFECTS

Author:

KÖKTEN HATICE1,ERKOÇ ŞAKIR1

Affiliation:

1. Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

Abstract

The surface structure, surface energy, and surface vacancy formation energy for B and N vacancy of the cubic boron nitride (c-BN)(110) surface have been investigated by performing Hartree-Fock and DFT calculations. Results are compared with available literature values. The vacancy formation energies [unrelaxed [Formula: see text] and relaxed (Ef)] are reported for the first time for c-BN(110).

Publisher

World Scientific Pub Co Pte Lt

Subject

Computational Theory and Mathematics,Computer Science Applications,General Physics and Astronomy,Mathematical Physics,Statistical and Nonlinear Physics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Theoretical investigations of surface reconstruction on C nanodiamonds and cubic-BN nanoparticles;Diamond and Related Materials;2015-09

2. 7.3.2 The surfaces of III-V compounds;Physics of Solid Surfaces;2015

3. Oxygen-doped c-BN(110) surface: DFT calculations;IOP Conference Series: Materials Science and Engineering;2010-11-01

4. Structural and electronic properties of carbon-doped c-BN(110) surface;Physica B: Condensed Matter;2009-12

5. Theoretical investigation of the hBN(0001)/cBN(111) interface;Diamond and Related Materials;2008-11

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