REFINED SIMULATION FOR THE DIFFUSION IN Sivia CHANDRASEKHAR HOPPING

Author:

ROY S. D. D.1,RAMACHANDRAN K.1

Affiliation:

1. School of Physics, Madurai Kamaraj University, Madurai-625 021, India

Abstract

The method employed by Chandrasekhar for the astronomical bodies is brought down here to study the diffusion in Silicon. A continuous position probability density for the diffusing particle, ω(r, t) representing the position of the diffusing particle at any time t, is used in the evaluation of the diffusion constant. The results agree reasonably well with the available experimental and theoretically reported values. The existence of "traps" in the semiconducting systems has been clearly brought out by this simulation technique.

Publisher

World Scientific Pub Co Pte Lt

Subject

Computational Theory and Mathematics,Computer Science Applications,General Physics and Astronomy,Mathematical Physics,Statistical and Nonlinear Physics

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