EFFECT OF TEMPERATURE ON THE BINDING ENERGY OF LOW LYING EXCITED STATES IN A QUANTUM WELL-Reference-Cited by-同舟云学术

EFFECT OF TEMPERATURE ON THE BINDING ENERGY OF LOW LYING EXCITED STATES IN A QUANTUM WELL

Published:2003-12-10 Issue:30 Volume:17 Page:5811-5817
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

NITHIANANTHI P.¹,JAYAKUMAR K.¹

Affiliation:

1. Department of Physics, Gandhigram Rural University, Gandhigram – 624302, Tamilnadu, India

Abstract

The temperature dependent binding energy of some low lying excited states for a compositional Quantum Well have been calculated for various impurity locations by extending the investigation of Elabsy.4 It has been observed that the temperature plays an important role in the binding energy of low lying excited states also.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979203023331

Reference4 articles.

1. Effect of nonparabolicity on the energy levels of hydrogenic donors inGaAs−Ga1−xAlxAsquantum-well structures

2. Low-lying excited states of a hydrogenic donor and resonant states in a quantum well

3. Temperature dependence of shallow donor states in GaAs-AlxGa1-xAs compositional superlattice

4. Temperature and pressure dependences of the dielectric constants of semiconductors

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