EPITAXIAL GROWTH OF TRANSPARENT CONDUCTIVE OXIDES-Reference-Cited by-同舟云学术

EPITAXIAL GROWTH OF TRANSPARENT CONDUCTIVE OXIDES

Published:2002-01-20 Issue:01n02 Volume:16 Page:173-180
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

OHTA HIROMICHI¹,ORITA MASAHIRO¹,HIRANO MASAHIRO¹,UEDA KAZUSHIGE²,HOSONO HIDEO²

Affiliation:

1. Hosono Transparent Electro Active Materials, ERATO, JST, KSP C-1232, Sakado, Takatsu, Kawasaki 213-0012 , Japan

2. Materials and Structures Laboratory, Tokyo Institute of Technology, Nagastsuta, Midori-ku, Yokohama 226-8503, Japan

Abstract

Transparent conductive oxides of ITO , ZnO , β- Ga 2 O 3, and CuGaO 2 and SrCu 2 O 2 were grown on single crystal substrates of α- Al 2 O 3 and YSZ by pulsed-laser deposition, and their crystallinity was evaluated by using high-resolution X-ray diffraction and electron microscope. Heteroepitaxial growth was observed in spite of relatively large lattice mismatches between film and substrate. A few disordered layers were generated automatically at film/substrate boundary, played buffer layer to suppress propagation of edge dislocations.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979202009615

Reference18 articles.

1. P-type electrical conduction in transparent thin films of CuAlO2

2. Bipolarity in electrical conduction of transparent oxide semiconductor CuInO2 with delafossite structure

3. SrCu2O2: A p-type conductive oxide with wide band gap

4. Fabrication of transparent p–n heterojunction thin film diodes based entirely on oxide semiconductors

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