LOCAL ELECTRIC FIELD EFFECTS AND TEMPERATURE DEPENDENCE OF RESISTIVITY AND HALL COEFFICIENT IN HIGH–Tc METAL OXIDES

Abstract

For high–Tc superconductor metal oxides (HTSC) it is shown that the dc resistivity and Hall effect temperature behaviour can be explained by the model of the paraelectric material close to the point of the Mott-Hubbard instability, in the ground state of which the current is carried by a liquid of boson-like pairs of carriers in upper and lower Hubbard bands. The Mott-Hubbard instability corresponds to the order-of-lattice-constant length of the mean free path and results in the temperature insensitivity of Drude conductivity. Nearly linear on T resistivity results from the Curie law via the local (acting) electric field. Fermion-like carriers, temperature excited over the energy of boson-like pair dissociation (pseudo gap), explain the temperature behaviour of Hall effect. Available data are compared with the model.