SPIN HALL EFFECT-Reference-Cited by-同舟云学术

SPIN HALL EFFECT

Published:2006-04-10 Issue:09 Volume:20 Page:1015-1036
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

SCHLIEMANN JOHN¹

Affiliation:

1. Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany

Abstract

The intrinsic spin Hall effect in semiconductors has developed to a remarkably lively and rapidly growing branch of research in the field of semiconductor spintronics. In this article we give a pedagogical overview on both theoretical and experimental accomplishments and challenges. Emphasis is put on the the description of the intrinsic mechanisms of spin Hall transport in III-V zinc-blende semiconductors and on the effects of dissipation.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S021797920603370X

Reference106 articles.

1. Spintronics: A Spin-Based Electronics Vision for the Future

2. Semiconductor Spintronics and Quantum Computation

3. Spintronics: Fundamentals and applications

4. Ferromagnetic semiconductors

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