Hall and Nernst effects in monolayer MoS2-Reference-Cited by-同舟云学术

Hall and Nernst effects in monolayer MoS2

Published:2016-03-30 Issue:08 Volume:30 Page:1650041
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

Zhang Yun-Hai¹²,Zhang Ming-Hua¹

Affiliation:

1. Department of Physics and Electronic Engineering, Heze University, Heze, Shandong 274015, P. R. China

2. Department of Physics, Qufu Normal University, Qufu, Shandong 273165, P. R. China

Abstract

We study Hall and Nernst transports in monolayer MoS2based on Green’s function formalism. We have derived analytical results for spin and valley Hall conductivities in the zero temperature and spin and valley Nernst conductivities in the low temperature. We found that tuning of the band gap and spin-orbit splitting can drive system transition from spin Hall insulator (SHI) to valley Hall insulator (VHI). When the system is subjected to a temperature gradient, the spin and valley Nernst conductivities are dependent on Berry curvature.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979216500417

Reference22 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Experimental observation of the quantum Hall effect and Berry's phase in graphene

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Emerging Photoluminescence in Monolayer MoS2

5. Single-layer MoS2 transistors

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