OHMIC CONTACTS ON DIAMOND BY R. F. SPUTTERING AND Ti-Au METALLIZATION
Author:
Affiliation:
1. Department of Physics, Lanzhou University, Lanzhou 730000, People's Republic of China
2. Material School, Beijing Polytechnic University, 100022, People's Republic of China
Abstract
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Link
https://www.worldscientific.com/doi/pdf/10.1142/S0217979202010634
Reference8 articles.
1. Field-Effect Transistors using Boron-Doped Diamond Epitaxial Films
2. High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond
3. Specific contact resistance measurements of ohmic contacts to semiconducting diamond
4. Evaluation of ohmic contacts formed by B+implantation and Ti‐Au metallization on diamond
5. Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. I. Gold contacts: A non-carbide-forming metal
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