Bilayered ZnO/Nb2O5 photoanode for dye sensitized solar cell

Author:

Beedri Niyamat I.1,Baviskar Prashant K.1,Supekar Abhijit T.1,Inamuddin 2,Jadkar Sandesh R.1,Pathan Habib M.1

Affiliation:

1. Advanced Physics Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411 007, India

2. Department of Chemistry, Faculty of Science, King Abdulaziz University, P. O. Box 80203, Jeddah 21589, Saudi Arabia

Abstract

Nb2O5 layer were deposited on ZnO by using doctor blade method. The preparation of a bilayered ZnO/Nb2O5 photoanode was introduce for dye-sensitized solar cell (DSSC) application. Deposition of Nb2O5 layer on ZnO film improves power conversion efficiency of DSSCs. The ZnO/Nb2O5photoanode-based DSSCs show increase in photocurrent, open circuit voltage and conversion efficiency. The ZnO/Nb2O5 solar cell provides 50 mV increase of open circuit voltage, [Formula: see text] increment in current density and [Formula: see text] increment in efficiency as compare to ZnO-based DSSCs. We further analyzed the electron recombination properties of ZnO and ZnO/Nb2O5 by utilizing electrochemical impedance spectroscopy (EIS). The EIS analysis (Bode Plot) for ZnO/Nb2O5 photoanode show shifting of the peak related to electron recombination towards low frequency as compared to ZnO photoanode. Thus, there is an increase in lifetime of electrons in the ZnO/Nb2O5 photoanode, confirming that the recombination reactions are reduced in ZnO/Nb2O5 photoanode as compared to the ZnO.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3