PHOTOELECTRICAL PROPERTIES OF TlInS2-LAYERED SINGLE CRYSTALS

Abstract

TlInS 2-layered single crystals were prepared by using a special technique for crystal growth, and the obtained crystals were analyzed by X-ray diffraction. The reflectance and transmittance spectra were measured for the mentioned layered crystals and analyzed over the incident photon energy range 1.96–2.46 eV and in the temperature range 77–300 K. In this work and with the aid of these spectra, the temperature dependence of optical transports and parameters were investigated. In line with the transmittance and reflectance analyses, the refractive index as a function of wavelength was determined in the low-energy region of the studied incident photon energy range. As results of the refractive index–wavelength variations, the oscillator and dispersion energies of the refractive index for the TlInS 2-layered single crystals were determined in the temperature range under investigation. Thereafter, static refractive index and static dielectric constant were also investigated.