Impurity-related nonlinear optical absorption under combined effects of intense laser field and band-edge nonparabolicity on InGaN QW

Abstract

Conduction band-edge nonparabolicity effect on linear and nonlinear optical properties related to 1s–1p intra-conduction band transition in unstrained wurtzite (In, Ga)N–GaN symmetric quantum well (QW) is investigated incorporating an additional external probe as well as the nonresonant intense laser field (ILF) effect. Using the compact density matrix approach and the iterative procedure, the analytical expressions of optical absorption coefficients (ACs) are calculated. The numerical results are obtained within the single-band effective mass and the one-parabolic-band approximations under finite potential barrier. It is found that the internal and external perturbations show an important impact on the optical spectrum. A critical value of the laser-dressed parameter (LDP) is obtained by limiting two behaviors. Moreover, the ILF can be used as a way to control the optical properties of the QW structures and to reduce the lift of the conduction band-edge.