Investigation of PTCR characteristics in Nb2O5-doped BaTiO3-based chip-type ceramics prepared by reduction sintering-reoxidation method

Author:

Cheng Xuxin1,Chen Xiaoming1,Cui Haining1,Wang Yuxin2,Xiong Chao3

Affiliation:

1. School of Electronic and Electrical Engineering, Zhaoqing University, Zhaoqing 526061, P. R. China

2. School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, P. R. China

3. School of Photoelectric Engineering, Changzhou Institute of Technology, Changzhou 213001, P. R. China

Abstract

This study investigates the influence of sintering conditions on electrical properties and positive temperature coefficient of resistance (PTCR) of [Formula: see text] (BTNO) ceramics, fired at [Formula: see text]C for different times from 1 to 6 h in a reducing atmosphere and reoxidised within the temperature range of [Formula: see text]–[Formula: see text]C for 1 h. The results showed that the room-temperature (RT) resistance and the resistance jump of the multilayer BTNO ceramics decreased with an increase in the firing time. Furthermore, the RT resistance of the BTNO samples gradually increased at first and then rapidly increased with increasing reoxidation temperature. In addition, the influence of sintering times on the microstructure of ceramics was also investigated.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Science and Technology Planning Project of Guangdong Province

Science and Technology Planning Project of Zhaoqing City

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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