CONSTRUCTION OF SnO2/SiO2/Si HETEROJUNCTION AND ITS LINEUP USING I–V AND C–V MEASUREMENTS

Abstract

Near-ideal n- SnO 2/n- Si heterojunction band edge lineup has been investigated with aid of I–V and C–V measurements. The heterojunction was manufactured by rapid thermal oxidation of Sn metal films prepared by thermal evaporation technique on monocrystalline n-type silicon. The experimental data of the conduction band offset ΔEc and valence band offset ΔEc were compared with theoretical values. The band offset ΔEc = 0.55 eV and ΔEv = 1.8 eV obtained at 300 K. The energy band diagram of n- SnO 2/n- Si HJ was constructed. C–V measurements depict that the junction was an abrupt type and the built-in voltage was determined from 1/C2–V plot.