STUDY OF THE MICRO-STRUCTURE OF PtxSi ULTRA-THIN FILM-Reference-Cited by-同舟云学术

STUDY OF THE MICRO-STRUCTURE OF PtxSi ULTRA-THIN FILM

Published:2011-08-20 Issue:21 Volume:25 Page:2925-2929
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

LIU SHUANG¹,FALCO CHARLES M.²,ZHONG ZHIYONG³

Affiliation:

1. School of Optical Electronic Information, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China

2. College of Optical Sciences, University of Arizona, Arizona 85721, USA

3. The State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China

Abstract

Ultra-thin platinum (Pt) films were deposited on Si (100) substrates at 160°C by magnetron sputtering and subsequently annealed to form silicides. The thickness of the Pt x Si films was found to be approximately 4 nm as determined by transmission electron microscopy (TEM). X-ray photoelectron spectroscopy (XPS) analysis shows that these films consist of PtSi and Pt 2 Si phases, and a multi-layer configuration of SiO x/ PtSi/Pt 2 Si/Si was detected by angle-resolved XPS. However, the Pt 3 Si phase was not detected by X-ray diffraction (XRD).

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979211100497

Reference11 articles.

1. Electrochemical and surface characterization of platinum silicide electrodes and their use as stable platforms for electrogenerated chemiluminescence assays

2. Transmission electron microscopy study of PtSi/Si (p-type) composites grown on Si(111) substrates

3. Microstructure, electrical, and optical properties of evaporated PtSi/p-Si(100) Schottky barriers as high quantum efficient infrared detectors

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