Plasmon modes in graphene — GaAs heterostructures at finite temperature

Abstract

This paper is to investigate the dispersion relation and decay rate of plasmon modes in a double layer system made of monolayer graphene (MLG) and infinite GaAs quantum well at finite temperature within the generalized random-phase-approximation and taking into account the 2DEG layer-thickness and the inhomogeneity of the background dielectric. Calculations demonstrate that when the quantum well width increases, the acoustic (AC) plasmon frequency decreases dramatically, but the optical (OP) one seems unchanged. In addition, the results also illustrate that the temperature and separated distance affect significantly both AC and OP plasmon modes of the system. Finally, the dielectric of the background acts strongly on the OP plasmon curve while carrier density in two layers and exchange-correlation effects only lead to remarkable changes for the acoustic one.