Investigation of PTCR characteristics in Sm2O3-doped BaTiO3-based chip-type ceramics prepared in a reducing atmosphere

Author:

Cheng Xuxin1,Xu Zhiyong1,Chen Xiaoming1,Yang Bingwen1,Wang Yuxin2,Dang Mingzhao3

Affiliation:

1. School of Electronic and Electrical Engineering, Zhaoqing University, Zhaoqing Road, Duanzhou District, Zhaoqing 526061, Guangdong, P. R. China

2. School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, Jiangsu, P. R. China

3. State Key Laboratory of Advanced Materials and Electronic Components, Guangdong Fenghua Advanced Technology Holding Co. Ltd, Fenghua Road, No. 18, Zhaoqing City, Guangdong 526020, P. R. China

Abstract

In this paper, we investigated the influence of cooling rates on electrical properties and positive temperature coefficient of resistance (PTCR) effect of (Ba1.22−xSmx)TiO3 + 0.007 mol SiO2 (BTS) ceramics, which were fired at 1200C for 30 min in a reducing atmosphere and then reoxidized at 700–800C for 1 h. The results showed that the room-temperature (RT) resistivity and the resistance jump of the chip-type BTS ceramics increased with an increase in the cooling rate. Furthermore, the RT resistivity of the BTS specimens gradually decreased at first and then increased with increasing donor-doping concentration. In addition, the influence of cooling rates on the microstructure of ceramics was also investigated.

Funder

National Natural Science Foundation of China

Department of Education of Guangdong Province

State Key Laboratory of Advanced Materials and Electronic Components

Youth Innovative Talents Project of Department of Education of Guangdong Province

Publisher

World Scientific Pub Co Pte Ltd

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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