Field effects on heterojunctions composed with electron-doped La1−xHfxMnO3 and Nb-SrTiO3 perovskites

Abstract

Thin films and heterojunctions of Hf[Formula: see text]-doped LaMnO3 manganite have been studied. The sole tetravalent state of Hf[Formula: see text] ensures formation of [Formula: see text]-type La[Formula: see text]Hf[Formula: see text]MnO3 (LHMO) manganite. Photoinduced resistance was also observed as illuminated by visible light. The induced photoresistance (PR) could be greatly enhanced by the compressive strain. The LHMO/Nb-STO heterojunctions showed excellent rectifying characteristics, which are comparable with those [Formula: see text]-junctions of conventional semiconductors. Their transport properties are tunable electrically and magnetically. Such LHMO/Nb-STO heterojunctions have the potential to develop novel functional field-effect transistors based on manganite perovskites.