Growth and characterization of epitaxial films based on semimagnetic Pb1−xEu<sub><i>x</i></sub>Te solid solutions on various substrates-Reference-Cited by-同舟云学术

Growth and characterization of epitaxial films based on semimagnetic Pb1−xEu_xTe solid solutions on various substrates

Published:2024-01-22 Issue: Volume: Page:
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

Mehrabova Matanat¹²^ORCID,Sadigov Rafig¹^ORCID,Nuriyev Idayat³,Nazarov Afin³^ORCID

Affiliation:

1. Engineering Physics and Electronics Department, Azerbaijan Technical University, 25 H. Javid ave., Baku, AZ 1073, Azerbaijan

2. Conversions of Renewable Energy Types Laboratory, Institute of Radiation Problems, 9 B. Vahabzade str., Baku, AZ1143, Azerbaijan

3. Epitaxial Layers and Structures Laboratory, Institute of Physics, 131 H. Javid ave., Baku, AZ 1143, Azerbaijan

Abstract

This paper presents the results of a study of the growth and structure properties of Pb[Formula: see text]EuxTe, ([Formula: see text]) epitaxial films with 0.5–1[Formula: see text][Formula: see text]m thickness, grown on BaF2 and SiO2 substrates oriented in the (111) direction, by the molecular beam condensation method in a vacuum of 10[Formula: see text] Pa with the use of an additional compensating source of Te vapor during the growth process. The optimal conditions for obtaining structurally perfect ([Formula: see text]–100[Formula: see text]) epitaxial films were established: [Formula: see text]–623[Formula: see text]K; [Formula: see text]K; [Formula: see text]–9 Å/s. It was determined that conductivity inversion occurs at the temperature of the compensating source 410[Formula: see text]K.

Publisher

World Scientific Pub Co Pte Ltd

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979224504198

Reference13 articles.