DFT study of electron energy loss spectra of sulfur in Janus MoSSe, MoSTe, WSSe and WSTe monolayers

Abstract

In this paper, electronic properties of Janus MSX monolayers (M = Mo, W; X = Se or Te), including electron energy loss near edge structures (ELNES), as K and [Formula: see text] edge spectra of sulfur atoms, have been calculated using a full potential scheme and the augmented plane wave plus local orbitals (APW+lo) method in the framework of density functional theory (DFT). Due to the lack of experimental results, the obtained spectra are compared with the corresponding spectra of MoS2 monolayer. The band structure analysis shows that the Janus MoSSe and WSSe monolayers are direct bandgap semiconductors, while the Janus MoSTe and WSTe monolayers are indirect bandgap semiconductors. In comparison to MoS2, the main structures of the K edge ELNES spectra of sulfur atoms in Janus monolayers occur at lower energies, due to the structural change and increased bond length. The relative reduction of intensities in the main structures predicts the possibility of reducing the number of partial densities of states (PDOS), that is, the reduced p PDOS for the K edge in the corresponding energy range. In the K ([Formula: see text] edge ELNES spectra of the sulfur atom in Janus monolayers and MoS2 monolayers, the main structures are due to the electron transfer to the unoccupied [Formula: see text] and [Formula: see text] states (3s of sulfur and 4d states of the transition metal).