Effect of anion (S−2 & Se−2) replacement on photovoltaic properties in transition metal (Ba-Barium) chalcogenide perovskites

Author:

Pandit Naincy1ORCID,Dubey Anusha2ORCID,Joshi Tarun Kumar3,Shukla Akash4,Rani Upasana5,Kamlesh Peeyush Kumar6ORCID,Gupta Rajeev7,Kumar Tanuj8,Kaur Kulwinder9,Verma Ajay Singh15ORCID

Affiliation:

1. Department of Natural and Applied Sciences, Glocal University, Saharanpur 247232, India

2. Department of Applied Sciences and Humanities, ITS Engineering College, Greater Noida 201310, India

3. Department of Physics, Swami Vivekanand Govt. P. G. College, Neemuch, Madhya Pradesh 458441, India

4. School of Life and Basic Sciences, Jaipur National University, Jaipur, Rajasthan 302017, India

5. Division of Research & Innovation, School of Applied and Life Sciences, Uttaranchal University, Uttarakhand, Dehradun 248007, India

6. School of Basic and Applied Sciences, Nirwan University, Jaipur, Rajasthan 303305, India

7. Department of Physics, School of Engineering, University of Petroleum & Energy Studies, Dehradun 248007, India

8. Department of Nanoscience and Materials, Central University of Jammu, Jammu 181143, India

9. Department of Physics, Mehr Chand Mahajan College for Women, Chandigarh 160036, India

Abstract

Material scientists have stepped up their search for efficient materials in low-cost, high-stability, nontoxic energy conversion devices. In this paper, emerging materials inspire us to study one of the perovskite chalcogens made from alkaline-earth metals (Barelium). Therefore, we determined some fundamental properties with some application-based properties, which explained their applicability in energy conversion device fabrication by first-principles calculation within the WIEN2K Code. Structure stability has been verified by Birch–Murnaghan fits and thermal stability at different temperatures and pressure ranges is explained by Gibbs function in thermodynamic properties. By using modified Becke–Johnson (mBJ) potential, electronic and optical characteristics of these materials provide insight into their nature: they were revealed to be direct bandgap semiconductors with the calculated values of 1.77[Formula: see text]eV (1.25[Formula: see text]eV) for BaZrS3(BaZrSe3), respectively. Both materials exhibit transparency on low-energy striking photons and demonstrate absorption and optical conduction in the UV region. Both materials exhibit transparency on low-energy striking photons and demonstrate absorption and optical conduction in the UV region. In the thermoelectric parameter, the figure of merit (ZT) is unity at room temperature and decreases up to 0.98 with temperature increment which reveals that these materials will be helpful in thermoelectric devices. As per the application part, we carried out the calculation of the spectroscopic limited maximum efficiency (SLME) and found that efficiency increases from 6.5% to 27.1% (8.1% to 31.9%) for BaZrS3 (BaZrSe3), respectively. The film thickness increased from 100[Formula: see text]nm to 1[Formula: see text][Formula: see text]m at room temperature and then stabilized. This emerging study shows that these materials can be used as an alert substance in energy conversion device fabrications and the proposed outcomes are in good acceptance with the experimental and other theoretical data. As per the optical and thermoelectric parameters of these materials, we infer that both are promising candidates in energy conversion device fabrication.

Publisher

World Scientific Pub Co Pte Ltd

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