Enhancement of thermoelectric power factor by Si:B addition to higher manganese silicide film

Abstract

Higher manganese silicide film ( HMS , MnSi x, x = 1.73–1.75) with addition of Si : B has been prepared on quartz substrate ( SiO 2) by magnetron sputtering of MnSi 2 and Si : B (1 at.% B content) targets. It is found that the Si : B -added HMS film has a much lower electrical resistivity (R) but maintains its high Seebeck coefficient (S). As a result, the thermoelectric power factor, PF = S2/R, is greatly enhanced. It is also found that the metal In together with Ag -paste can be used as ohmic contact materials for measuring the electrical properties of the HMS film. The thermoelectric power factor can reach 1255 μW/m-K2 at 733 K for the Si : B -added HMS film, which is about two times higher than that of the pure HMS film.