Effect of excitation voltage on bias temperature coefficient of MEMS sandwich accelerometer

Author:

Dong Xianshan1,Huang Qinwen1,Zhu Junhua1,Xu Wei2,Lai Ping1

Affiliation:

1. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5, Electronics Research Institute of the Ministry of Industry and Information Technology, No. 110 Dongguanzhuang Road, Tianhe District, Guangzhou 510610, P. R. China

2. Institute of Electronic Engineering, China Academy of Engineering Physics, No. 64 Mianshan Road, Mianyang 621900, P. R. China

Abstract

In MEMS closed-loop accelerometer, excitation voltage is an important design parameter that is related to many performance indexes, and the bias temperature coefficient is a key point for MEMS accelerometer. But the effect of excitation voltage on bias temperature coefficient is not clear and their relation has not yet been established. This paper studies the effect of excitation voltage on bias temperature coefficient of MEMS sandwich accelerometer. The mechanism of their relation is point out, and experiments of bias temperature drift with different excitation voltages are carried out. The measured results show that the excitation voltage influences the bias temperature coefficient of MEMS sandwich accelerometer greatly, and the frame of sensor structure is the main source of bias temperature drift in MEMS sandwich accelerometer. This paper is also helpful for researchers to further understand the source of bias drift in MEMS sandwich accelerometer and make corresponding improvement.

Funder

Generality Research Foundation of Component

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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