Influence of Ti content and sintering temperature on dielectric properties of Bi4Ti3O12 ceramics

Abstract

An ultra-broad working temperature dielectric material, Bi4Ti[Formula: see text]O[Formula: see text]([Formula: see text] = 2.96, 2.98, 3.0, 3.02 and 3.04), prepared by a conventional mixed oxide route was investigated which is supposed to replace lead-containing ceramics for its outstanding dielectric properties. Microstructure and dielectric properties of well-sintered samples (at 1040[Formula: see text]C, 1060[Formula: see text]C, 1080[Formula: see text]C, 1100[Formula: see text]C and 1120[Formula: see text]C) were studied. X-ray diffraction analysis indicated that the new material was in a single Bi-layered perovskite phase. The dielectric constant and dielectric loss at different frequencies (10, 100 and 1000 kHz) were measured at 1100[Formula: see text]C. With the increasing frequency, the dielectric constant decreased and the dielectric loss was almost unchanged. While at 100 kHz, there is the highest relative permittivity ([Formula: see text]) of 2822.8 and the lowest dielectric loss of 0.0040 ([Formula: see text] = 2.98), the Curie temperature ([Formula: see text]) is 668.9[Formula: see text]C. At the frequency of 1 MHz, the highest relative permittivity ([Formula: see text]) is 1115.8 when Ti content is 3.02, and the Curie temperature is 672.2[Formula: see text]C. SEM can explain the results of the dielectric spectrum at different Ti content and sintering temperatures. [Formula: see text] plots show that Bi4Ti3O[Formula: see text] ceramics are a kind of dielectrics. Since it possesses large dielectric constant, low dielectric loss and stable temperature character, this material shows promising applications for the ultra-broad temperature range components, such as high-temperature multilayer ceramic capacitors and microwave ceramics.