Thermoelectric properties of T-shaped graphene nanodevice

Abstract

The thermoelectric properties of a T-shaped graphene nanodevice (TGN) are investigated by means of the Landauer approach using the π-electron tight-binding model. The dependence of thermopower on the temperature is studied and the results are qualitatively in agreement with many features recently observed in thermoelectric measurements on graphene nanodevice which suggests the existence of a minimum when the EF is several kBT away from the Dirac point. Thermoconductance κ is proportional to transmission coefficient and thermal current has a linear dependence on the temperature. Further, both the electrical and thermal current of electrons in TGN are calculated. The results could be useful in designing efficient graphene-based thermoelectric devices.