EFFECT OF GRAIN BOUNDARY ON THE CHARACTERISTICS OF POLY-SiMETAL–INSULATOR–SEMICONDUCTOR PHOTODETECTOR

Author:

ZHOU YUMING1,HE YIGANG2

Affiliation:

1. School of Electrical Engineering, Anhui University of Technology, Anhui 243002, P. R. China

2. College of Electrical and Information Engineering, Hunan University, Hunan 410082, P. R. China

Abstract

The effect of grain boundary on the characteristics of poly- Si metal–insulator–semiconductor photodetector is investigated utilizing two-dimensional device simulator. In the investigation, the trap states in grain boundary are composed of two types: tail states and deep-level states, both of which consist of acceptor-like trap and donor-like trap. The simulation results show that the photocurrent of photodetector decreases considerably in the case of tail states above 5 ×19 cm-3, but less susceptible to deep-level states. Furthermore, it is found that the spectral responsivities of the photodetector decrease when the energy level of acceptor-like traps shifts towards the midgap, but keep unchanged for the case of donor-like traps.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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