Affiliation:
1. S. Petersburg Nuclear Physics Institute, 188300 Gatchina, Russia
Abstract
The research results of photoelectric, optical and recombination properties of neutron transmutation doped (NTD) semiconductor solid alloys Si 1-x Ge x(x = 0.008–0.112) are presented in spectral range 0.8–10.6 μm. It is shown that these properties of NTD Si 1-x Ge x are determined by creation of transmutation impurities of Se and Ga as well as by variation of Ge content and compensation. The theoretical and applied aspects of the NTD Si 1-x Ge x have been also considered.
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics