Dual-junction gallium nitride solar cells with hybrid tunnel junction layers-Reference-Cited by-同舟云学术

Dual-junction gallium nitride solar cells with hybrid tunnel junction layers

Published:2024-05-22 Issue: Volume: Page:
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

Hou Jei-Li¹^ORCID,Lin Wei-Heng²^ORCID,Chen Wei-Shou³^ORCID,Chang Sheng-Po⁴^ORCID,Chang Shoou-Jinn²^ORCID

Affiliation:

1. National Science and Technology Museum, No. 720 Jiuru 1st Rd., Kaohsiung City 807, Taiwan (R.O.C.)

2. Institute of Microelectronics & Department of Electrical Engineering, Cheng Kung University, No. 1, University Road Tainan City 701, Taiwan (R.O.C.)

3. Epistar Corporation, Southern Taiwan Science Park, Tainan 741, Taiwan (R.O.C.)

4. Department of Microelectronics Engineering, National Kaohsiung University of Science and Technology, No. 142, Haizhuan Rd., Nanzi Dist, Kaohsiung City 811, Taiwan (R.O.C.)

Abstract

The authors reported the fabrication of a dual-junction (2J) GaN solar cell (SC) with hybrid tunnel junction (TJ) layers. Compared with the single-junction (1J) SCs, it was found from the XRD spectra that the crystal quality of the SC with TJ was almost identical. However, the efficiencies of bottom 1J SC, top 1J SC, and 2J SC increase from 1.18 to 1.07, 1.12 to 1.20, and 1.59 to 1.73, respectively, when the concentrated suns increased from 1 to 100 suns. It was found that the use of hybrid TJ layers could result in a higher conversion efficiency in 2J SC and was essential in SCs for serially connecting multiple active junctions.

Funder

the Ministry of Science and Technology

Publisher

World Scientific Pub Co Pte Ltd

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979225400272

Reference23 articles.

1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

2. White Light Emission of Monolithic Carbon-Implanted InGaN–GaN Light-Emitting Diodes

3. Nitride-based near-ultraviolet LEDs with an ITO transparent contact

4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

5. GaN on Si Technologies for Power Switching Devices