THE INFLUENCE OF SPUTTERING TIME AND OXYGEN PARTIAL PRESSURE ON ELECTRICAL RESISTIVITY OF Bi:2201 THIN FILMS-Reference-Cited by-同舟云学术

THE INFLUENCE OF SPUTTERING TIME AND OXYGEN PARTIAL PRESSURE ON ELECTRICAL RESISTIVITY OF Bi:2201 THIN FILMS

Published:2004-06-10 Issue:14 Volume:18 Page:2085-2090
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

POP AUREL¹,ILONCA GHEORGHE¹,DELTOUR ROBERT²

Affiliation:

1. University Babes-Bolyai, Faculty of Physics, str. M. Kogalniceanu 1, 3400 Cluj-Napoca, Romania

2. Physique des Solides, Universite Libre de Bruxelles, C.P. 233, Brrxelles, Belgium

Abstract

By using different times of sputtering and different value of partial pressure of oxygen in sputtering gas, Bi 2.1 Sr 1.9 CuO y thin films ( Bi :2201) were deposited onto heated single crystal (100) MgO substrates. The temperature dependence of the in-plane resistivity measured on epitaxial c-axis thin films is strongly influenced by the thin films synthesis conditions. Electrical resistivity changes strongly from optimal doping superconducting state to underdoped insulator state with decreasing partial pressure in sputtering gas. The increase of electrical resistance near superconducting transition were analyzed by using some theoretical models.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979204025233

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1. The metal–insulator transition induced in Bi2Sr1.93Cu1.01O6+δ thin films by oxygen concentration in sputtering gas;Physica C: Superconductivity;2007-09

2. Effect of oxygen concentration in the sputtering gas and effect of substrate type on the electrical resistance of Bi:2201 nanoscale thin films;Journal of Alloys and Compounds;2005-03