Spin-polarized transport of the electron in a device with a Schottky metal stripe and a δ-doping

Abstract

We theoretically investigate the electron transport properties in a nanostructure modulated by a ferromagnetic stripe (FM) and a Schottky metal stripe (SM) as well as a [Formula: see text]-doping with the help of transfer-matrix method. It is found that the position and the weight of the [Formula: see text]-doping, the width of the SM and the electrical potential, all play an important role in the electron transmission probability and the spin polarization. Therefore, we can control the electron transport properties through adjusting the SM and the [Formula: see text]-doping. These interesting phenomena may be very helpful for designing the spintronic devices.