DIODE p-i-n-STRUCTURES BASED ON NEUTRON DOPED Si1-xGex-ALLOYS

Abstract

Photoelectric properties of neutron transmutation doped (NTD) Si 1-x Ge x solid solutions (alloy) with variable composition are presented. It is shown that the application of NTD method to Si 1-x Ge x solid solutions with gradient composition (x = 0–2 at.%) along an ingot allows to receive p-i-n-structures with typical diode characteristics. We studied electrical and photoelectrical properties of that structure. Deep level transient spectroscopy of p-i-n diode has revealed the energy levels in the forbidden zone of Si 1-x Ge x, connected with transmutation Se impurity. It is established that p-i-n-structures possess high spectral sensitivity with a maximum at hν = 1.2–1.5 eV (300 K). Possible application of Si 1-x Ge x-alloys in development of uncooled photodiodes with large effective area was considered.