DIODE p-i-n-STRUCTURES BASED ON NEUTRON DOPED Si1-xGex-ALLOYS

Author:

CHEKANOV V.1,YEVSEYEV V.1,KURYATKOV V.2,PROKOFYEVA T.3

Affiliation:

1. St. Petersburg Nuclear Physics Institute RAS, 188300 Gatchina, Russia

2. Texas Tech University, Lubbock, TX 79409, USA

3. X-FAB Texas, Inc. 2301 N. University Ave., Lubbock, TX 79415, USA

Abstract

Photoelectric properties of neutron transmutation doped (NTD) Si 1-x Ge x solid solutions (alloy) with variable composition are presented. It is shown that the application of NTD method to Si 1-x Ge x solid solutions with gradient composition (x = 0–2 at.%) along an ingot allows to receive p-i-n-structures with typical diode characteristics. We studied electrical and photoelectrical properties of that structure. Deep level transient spectroscopy of p-i-n diode has revealed the energy levels in the forbidden zone of Si 1-x Ge x, connected with transmutation Se impurity. It is established that p-i-n-structures possess high spectral sensitivity with a maximum at hν = 1.2–1.5 eV (300 K). Possible application of Si 1-x Ge x-alloys in development of uncooled photodiodes with large effective area was considered.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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