Quantum interference of spontaneous-emission channels near the surface of Bi2Se3-Reference-Cited by-同舟云学术

Quantum interference of spontaneous-emission channels near the surface of Bi2Se3

Published:2021-04-30 Issue:11 Volume:35 Page:2150154
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

Karaoulanis Dimitrios¹,Yannopapas Vassilios¹^ORCID

Affiliation:

1. Department of Physics, National Technical University of Athens, Athens GR-157 80, Greece

Abstract

We show that the quantum interference between two spontaneous emission channels can be significantly enhanced when a three-level V-type atom is placed near the surface of the topological insulator [Formula: see text]. The enhancement of quantum interference is a result of the strong dependence of the spontaneous emission rate on the orientation of an atomic dipole relative to surface of the [Formula: see text] at the frequencies of polaritonic-type excitations.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S021797922150154X

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