TRANSPORT IN EXCITED STATES OF SEMICONDUCTOR SUPERLATTICES

Author:

SIBILLE A.1,MINOT C.2,LARUELLE F.3

Affiliation:

1. ENSTA, 32 Bd Victor, 75739 Paris Cedex 15, France

2. France-Telecom, CNET-DTD, 196 av. H. Ravera, Bp 107, 92225 Bagneux Cedex, France

3. CNRS-L2M, 196 av. H. Ravera, 92220 Bagneux, France

Abstract

The electronic conduction processes in the minibands and excited states of semiconductor superlattices are reviewed and discussed. The paper includes an introduction on miniband conduction and hopping conduction between localized states. It focusses subsequently on interminiband transport, both in the context of theoretical approaches and of experimental observations of these effects. Rabi oscillations between interacting Wannier–Stark levels are considered in detail. The role of scattering, and the manifestation of multipeaked velocity-field relationships on carrier and electric field profiles are evidenced. The final part concerns transport above the superlattice barriers, and quasi-ballistic transport in excited superlattice minibands.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Transport in GaAs/Al x Ga1−x As superlattices with narrow minibands: Effects of interminiband tunneling;Semiconductors;2009-02

2. Miniband-related 1.4–1.8μm Luminescence of Ge/Si Quantum Dot Superlattices;Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics;2008

3. Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices;Nanoscale Research Letters;2006-08-01

4. High-frequency absorption and gain in superlattices: Semiquasistatic approach;Physica E: Low-dimensional Systems and Nanostructures;2006-06

5. Quantum model of electronic transport in superlattice minibands;Physical Review B;2004-10-25

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