ELECTRONIC, OPTICAL AND MECHANICAL PROPERTIES OF AIIBVI SEMICONDUCTORS

Abstract

The modified dielectric theory of solids is applied to investigate electronic, optical and mechanical properties of A II B VI binary semiconductors ( ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, HgS, HgSe & HgTe ). The values of homopolar gaps (Eh), heteropolar gaps (Ec) and average energy gaps (Eg) were evaluated for these A II B VI groups of binary semiconductors with Zinc-blende (ZB) structure. The derived values of average energy gap (Eg) were found to be in excellent agreement with the values obtained from the Penn model except ZnO . The electronic polarizability was investigated using Chemla's relation and the values were found to be in a very good agreement with the results obtained from the Clausius–Mossotti relation. The crystal ionicity (fi) was evaluated and the obtained values were compared with the values obtained by different researchers. The evaluated values of crystal ionicity were used to calculate the electronic, optical, mechanical properties such as bulk modulus (B in GPa) cohesive energy or total energy (U in Ryd. electron) and microhardness (H in GPa) of these compound semiconductors. A good agreement has been found between calculated and experimental data.