Epitaxial growth and in-plane dielectric properties of DyMnO3 by pulsed-laser deposition

Abstract

Perovskite manganites DyMnO3 thin film was grown epitaxially on LaAlO3 (110) substrate by using pulsed-laser deposition (PLD) technique. The film showed perfectly orthorhombic crystallization and was well-aligned with the substrates. The in-plane dielectric properties of DyMnO3 film were measured as functions of temperature (80–300 K) and frequency (120–100 kHz) by using parallel-plate interdigital electrodes (IDEs). Distinct transitions can be observed in the complex permittivity and loss tangent and the respective peaks shifted to higher temperatures as the measuring frequency increased. By the Arrhenius plots, the determined activation energy of the thermally activated dielectric relaxations was about 0.20 eV. According to the relationship of the real and imaginary parts of the complex permittivity, the in-plane dielectric properties of epitaxial DyMnO3 thin film can be described as the universal dielectric response (UDR) behavior.