EFFECT OF PSEUDOMORPHIC MULTIPLE QUANTUM WELL LAYERS ON CHARACTERISTICS OF UNCOOLED ELECTROLUMINESCENT DIODE-Reference-Cited by-同舟云学术

EFFECT OF PSEUDOMORPHIC MULTIPLE QUANTUM WELL LAYERS ON CHARACTERISTICS OF UNCOOLED ELECTROLUMINESCENT DIODE

Published:2009-12-30 Issue:32 Volume:23 Page:5859-5865
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

HAN JAE-HO¹,LHEE ZAIL²,PARK SUNG-WOONG³

Affiliation:

1. Department of Electrical and Computer Engineering, Johns Hopkins University, 105 Barton Hall, 3400 N. Charles St., Baltimore, MD 21218, USA

2. AMOLED Group, Samsung SDI, 428-5, Gongsedong, Yongin, 446-577, S. Korea

3. Network Examination Team, Korean Intellectual Property Office, 920 Dunsandong, Seogu, Daejeon, 302-701, S. Korea

Abstract

We have fabricated and characterized the uncooled light emitting device having a pseudomorphic structure of multiple quantum wells. The effect of numbers of compressively strained quantum well layers on the semiconductor diode laser characteristics was experimentally demonstrated, depending on room and high temperatures. In addition to the automatically embedded absorptive grating which can reduce the epitaxial growth step, the laser performance can be optimized for both threshold current and differential slope efficiency when the quantum well numbers are reduced to five layers for optical communication systems.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979209054764

Reference16 articles.

1. High-Reliable and High-Speed 1.3 $\mu$m Complex-Coupled Distributed Feedback Buried-Heterostructure Laser Diodes With Fe-Doped InGaAsP/InP Hybrid Grating Layers Grown by MOCVD

2. Fabrication and Packaging of 40-Gb/s AlGaInAs Multiple-Quantum-Well Electroabsorption Modulated Lasers Based on Identical Epitaxial Layer Scheme

3. Self-Pulsating Amplified Feedback Laser Based on a Loss-Coupled DFB Laser

4. Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure

5. Optimization and Characterization of InGaAsN/GaAs Quantum-well Ridge Laser Diodes for High Frequency Operation