EFFECT OF THE COUPLING BETWEEN THE NORMAL AND LATERAL DEGREES OF FREEDOM ON LOCALIZED ELECTRONIC STATES IN SUPERLATTICE'S WITH STRUCTURAL DEFECTS

Abstract

Using a effect-barrier height method, we investigate the effect of coupling between normal and lateral degree of freedom of an electron on the localized electronic states at zero and finite magnetic fields perpendicular to interfaces in SL's with structural defect layer within the framework of effective-mass theory. The numerical calculations for GaAs/AlxGa1-xAs material show that minibands, minigaps and localized levels is obviously dependent on the transverse wave number kxy. Magneto-coupling effect brings about not only the splitting of the localized electron levels but also the definite dependence of the minibands, minigaps, localized levels and localization degree on magnetic field and Landau indices. It is believed that applying an appropriate magnetic field may provide a available way to control the minibands, minigaps and localized levels in structural defect superlattice's to match practice requirements.