FABRICATION OF SmBiO3/NiO DOUBLE BUFFER LAYER FOR COATED CONDUCTORS

Abstract

NiO layers were prepared in Ar flow at temperatures between 750°C to 850°C by using surface oxidation epitaxial method on Ni –5%W alloy substrates. NiO (200) buffer layer with well textured, smooth, dense and crack-free surface was prepared in Ar ambience with a flow rate of 500 ml/min at 800°C for 10.0 min. Then SmBiO 3 buffer layer was coated on the well epitaxial NiO (200) layer by chemical solution deposition (CSD) method.