EFFECT OF LASER ON THE NONPARABOLICITY OF THE CONDUCTION BAND AND HYDROGENIC IMPURITY STATES IN A SEMICONDUCTOR QUANTUM WELL

Abstract

The effect of laser on the nonparabolicity of the conduction band for hydrogenic donor states like 1s, 2s, 2p± and 2p0 in a GaAs/Al x Ga 1-x As quantum well have been computed in a finite barrier model using variational principle in the effective mass approximation. The limiting values of the ground state and few excited state binding energies for a laser dressed-donor have been obtained. The results are presented and discussed.