Nanostructures in silicon carbide crystals and films

Abstract

Phase transformations of SiC crystals with grown original defects and thin films have been presented. The SiC crystals were grown by the Tairov method and the films were obtained by the “sandwich” and Chemical Vapor Deposition (CVD) methods.The analysis of absorption spectra, excitation spectra and low-temperature photoluminescence spectra testifies to the formation of a new microphase during the growth. The complex spectrum can be decomposed into similar structure-constituting spectra shifted on the energy scale relative to the former. Such spectra are indicators of the formation of new nanophases.The joint consideration of photoluminescence spectra, excitement photoluminescence spectra and absorption spectra testifies to the uniformity of different spectra and the autonomy of each of them. Structurally, the total complexity spectra correlate with the degree of disorder (imperfection) of the crystal and are related to the peculiarities of a defective performance such as a one-dimensional disorder. Three different types of spectra have three different principles of construction and behavior.