DISSIPATIVE STRUCTURES IN A DOUBLE PLASMA ON AN EXCITED SEMICONDUCTOR: NEAR ONE-DIMENSIONAL SYSTEMS

Abstract

The formation of dissipative structures in a double plasma of electron and holes, generated on a semiconductor sample by submitting it to a continuous laser beam, is investigated. The equations of motion for the quasi-particles are obtained after the nonequilibrium statistical operator method and constitute an infinite system of coupled differential equations. When the kinetics of the system is one-dimensional, the search for the eigen-values of the linear stability analysis matrix, in the [Formula: see text] limit, reduces to an equation of 8th degree. The results show that the doped system is intrinsically unstable with respect to the intensity of the laser and that the bifurcation from the stable state to the dissipative structure is from a stable to an unstable node.