DETERMINATION OF TRAPPING CENTER PARAMETERS OF Tl2Ga2S3Se LAYERED CRYSTALS BY THERMALLY STIMULATED CURRENT MEASUREMENTS
Author:
Affiliation:
1. Department of Physics, Nevşehir University, 50300 Nevşehir, Turkey
2. Department of Physics, Middle East Technical University, 06531 Ankara, Turkey
Abstract
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Link
https://www.worldscientific.com/doi/pdf/10.1142/S0217979210055585
Reference29 articles.
1. Untersuchungen �ber tern�re Chalkogenide. XXIV. Zur Struktur des TlGaSe2
2. Bonding and structure of gallium thallium selenide (GaTlSe2)
3. Electrical and optical properties of as-grown TlInS2, TlGaSe2 and TlGaS2 single crystals
4. Photoconductivity of TlGaSe2 layered single crystals
5. Optical properties and photo-induced memory effect related with structural phase transition in TlGaS2
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1. Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl2Ga2S3Se crystals;Journal of Physics and Chemistry of Solids;2015-07
2. Structural and optical properties of thermally evaporated Ga–In–Se thin films;Modern Physics Letters B;2014-05-30
3. Thermoluminescence properties of Tl2Ga2S3Se layered single crystals;Journal of Applied Physics;2013-05-21
4. Trapping Center Parameters in N-Implanted Tl2Ga2S3Se Single Crystals by Thermally Stimulated Currents Measurements;Acta Physica Polonica A;2013-04
5. Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals;Physica B: Condensed Matter;2012-11
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