COULOMB BLOCKADE OSCILLATIONS OF CONDUCTANCE AT FINITE ENERGY LEVEL SPACING IN A QUANTUM DOT

Abstract

We find an analytical expression for the conductance of a single electron transistor in the regime when temperature, level spacing and charging energy of a grain are all of the same order. We consider the model of equidistant energy levels in a grain in the sequential tunneling approximation. In the case of spinless electrons, our theory describes transport through a dot in the quantum Hall regime. In the case of spin-½ electrons, we analyze the line shape of a peak, shift in the position of the peak's maximum as a function of temperature and the values of the conductance in the odd and even valleys.