An approach to decrease dimensions of field-effect transistors without p–n-junctions

Abstract

It has been recently shown, that manufacturing p–n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or radiation defects leads to increasing sharpness of p–n-junctions (both single p–n-junctions and p–n-junctions, which include into their system). In this situation, one can also obtain increase of homogeneity of dopant in doped area. In this paper, we consider manufacturing a field-effect heterotransistor without p–n-junction. Optimization of technological process with using inhomogeneity of heterostructure gives us possibility to manufacture transistors to be more compact.